SICCattended onsemi’s China Strategy Launch Event and the Inauguration Ceremony of the Greater China headquartersof late. Mr. Zong Yanmin, Chairman of the compa...
As a global leader in silicon carbide substrates, SICC (688234.SH) has achieved a historic breakthrough in the global wide-bandgap semiconductor materials secto...
Welcoming the Year of the Horse! Wishing all colleagues and families a Happy New Year！ Wishing all partners of SICC a Happy Spring Festival Ha...
ULM, Germany – At the Bosch Global Supplier Award ceremony held in Ulm, Germany on Oct 16, 2025, SICC Co., Ltd. was honored with a Bosch Global Supplier Award. ...
Toshiba Electronic Devices & Storage Corporation ("Toshiba") and SICC Co., Ltd. (“SICC”) have signed a memorandum of understanding (MOU)under which they wil...
SICC (02631. HK) was officiallylisted on the main board of the Hong Kong Stock Exchange on August 20, 2025, becoming the only SiC substrate company listed on bo...
On July 14, 2025, Sunny OmniLight’s Equipment Moving-in and Strategic Cooperation Signing Ceremony was grandly held in Shanghai. This event not only marks a maj...
Driven by the dual forces of the new energy revolution and the reconstruction of the global industrial chain, the third-generation semiconductors with silicon c...
Shanghai, March 2025 — At Semicon China 2025, one of the world’s premier semiconductor expos, SICC made a powerful statement by unveiling its full portfolio of 300mm silicon carbide (SiC) substrates — including high-purity semi-insulating, conductive P-type, and N-type variants. Among them, the 300mm SiC optical waveguide wafer drew exceptional attention, positioning SICC at the forefront of innovation for next-generation AR and virtual display technologies.
