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SiC Single Crystal

SiC wafer manufacturing process

Current > SiC wafer manufacturing process

Production Process of SiC Single Crystal

Silicon carbide single crystal is extremely rare in nature and can only be prepared by artificial synthesis. At present, the industrial production of silicon carbide substrate is mainly based on PVT method. This method needs to sublimate the powder with high temperature and vacuum, and then let the components grow on the seed surface through thermal field control, so as to obtain the silicon carbide crystals. The whole process is completed in an enclosed space, with few effective monitoring and many variables, which requires high process control accuracy.

SICC independently own the whole process from SiC powder to crystal growth and wafering.

SiC Powder

Si and C are synthesized to SiC polycrystalline particles in the ratio of 1:1
SiC powder is the source of crystal growth, and its particle size and purity will directly affect the crystal quality
Especially in the preparation of semi-insulating substrate, the requirement of powder purity is very high
(Impurity content<0.5ppm)


As the base of crystal growth, it provides the basic lattice structure for crystal growth
It is also the core raw material for crystal quality

Crystal Growth

Physical Vapor Transport(PVT)
The raw materials are heated,
and the sublimated components recrystallize on the seed surface through vapor sublimation and thermal field control


SiC is a hard and brittle material whose hardness is second only to diamond
Therefore, it takes long time for slicing, and is easy to crack.


Lapping and polishing is to process the substrate surface to nano smooth mirror, which is Epi-ready
The surface state of substrate, such as surface roughness and thickness uniformity, will directly affect the quality of epitaxy and then affect the quality of devices.

Cleaning • Inspection

To remove residual particles and metal impurities in the wafering processes
The final inspection can retain complete quality information such as substrate surface, surface flatness and crystal quality
It helps to trace for the downstream process
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